Balanced sense amplifier control for open digit line architecture memory devices

ABSTRACT

A balanced sense amplifier control for open digit line architecture memory devices. Firing of the sense amplifiers on each side of a section of a memory device is controlled by a two stage NAND gate logic circuit that utilizes a tree routing scheme. By gating the global signal with a section signal through the two stage NAND gate logic circuit, the sense amplifiers on each side of a section can be fired simultaneously.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates generally to semiconductor memorydevices and, more particularly, to an open digit line architecturememory device having a balanced sense amplifier control.

[0003] 2. Description of the Related Art

[0004] An increasing number of electronic equipment and electronic-basedsystems require some form of high-speed memory devices for storing andretrieving information (or “data”). While the types of such memorydevices vary widely, semiconductor memory devices are most commonly usedin memory applications requiring implementation in a relatively smallarea. Within this class of semiconductor memory devices, the DRAM(Dynamic Random Access Memory) is one of the more commonly used types.

[0005] The DRAM has memory arrays consisting of a number of intersectingrow and column lines of individual transistors or memory cells. In aconventional dynamic random access memory (DRAM) device each memorycell, or memory bit, consists of one transistor and one capacitor. Aterminal of the transistor is connected to a digit line, or bitline, ofthe memory device. Another terminal of the transistor is connected to aterminal of the capacitor and the gate terminal of the transistor isconnected to a wordline of the memory device. The transistor thus actsas a gate between the digit line and the capacitor.

[0006] The second terminal of the capacitor is connected to a voltagerail which carries a voltage, such as VCC/2. Thus, when the wordline fora particular cell is active, the gate transistor is in a conductingstate and the capacitor is connected to the digit line. The capacitorstores a charge that, depending on whether the polarity of the voltageacross the capacitor is positive or negative, represents either a logichigh or a logic low value.

[0007] Typically, a microcomputer circuit selects (or activates)particular row and column lines to access selected memory cells.“Access” typically refers to reading data from or writing data toselected memory cells. Reading data from the memory cells involves theuse of a sense amplifier to detect whether the voltage level stored inthe memory cell represents a binary one or a binary zero.

[0008] Memory devices are typically constructed with complementary digitlines of equal capacitance. Sense amplifiers are connected between thedigit lines and operate to sense the differential voltage across thedigit lines. An open digit line architecture, as illustrated in FIG. 1,features the sense amplifier circuits 10 between arrays 12, 14, 16, 18.True and complement digit lines, such as for example D1 20 and D1* 22come from separate arrays 14, 16 on each side of the sense amplifiers 10as illustrated in FIG. 1.

[0009] Operation of the sense amplifiers 10 is accomplished by applyingvarious signals to each sense amplifier to fire the sense amplifiers asis well known in the art. FIG. 2 illustrates the circuitry of a senseamplifier 10 of FIG. 1. As is generally known in the art, the term senseamplifier includes a collection of circuit elements connected to thedigit lines of a DRAM array. This collection typically includes devicesfor equilibration and bias, one or more N-sense amplifiers, one or moreP-sense amplifiers, and devices connecting selected digit lines toinput/output signal lines as will be described below.

[0010] As shown in FIG. 2, sense amplifier 10 includes a P-senseamplifier 30 and an N-sense amplifier 40 for sensing charge stored inthe selected memory cell of the selected array via a voltagedifferential on the pair of digit lines D1 20 and D1* 22. Equilibrationcircuit 50 is provided to equilibrate the digit lines D1 20 and D1* 22.Equilibration circuit 50 includes transistor 52 with a firstsource/drain region coupled to digit line D1 20, a second source/drainregion coupled to digit line D1* 22 and a gate coupled to receive anequilibration signal EQ. Equilibration circuit 50 further includes firstand second transistors 54 and 56. Transistor 54 includes a firstsource/drain region that is coupled to digit line D1 20, a gate that iscoupled to receive the equilibration signal EQ and a second source/drainregion that is coupled to receive an equilibration voltage Veq, which istypically equal to Vcc/2. Second transistor 56 includes a firstsource/drain region that is coupled to digit line D1* 22, a gate that iscoupled to receive the equilibration signal EQ and a second source/drainregion that is coupled to the equilibration voltage Veq. When the signalEQ is at a high logic level, equilibration circuit 50 effectively shortsdigit line D1 20 to digit line D1* 22 such that both lines areequilibrated to the voltage Veq.

[0011] When P-sense amplifier 30 and N-sense amplifier 40 have sensedthe differential voltage across the digit lines D1 20 and D1* 22 (asdescribed below), a signal representing the charge stored in theaccessed memory cell is output from the DRAM device on the input/output(I/O) lines I/O 36 and I/O* 38 by connecting the I/O lines I/O 36 andI/O* 38 to the digit lines D1 20 and D1* 22, respectively. A columnselect (CSEL) signal is applied to transistors 40, 42 to turn them onand connect the digit lines D1 20 and D1* 22 to the I/O lines I/O 36 andI/O* 38.

[0012] The operation of the P-sense amplifier 30 and N-sense amplifier40 is as follows. These amplifiers work together to detect the accesssignal voltage and drive the digit lines D1 20 and D1* 22 to Vcc andground accordingly. As shown in FIG. 22, the N-sense amplifier 40consists of cross-coupled NMOS transistors 42, 44 and drives the lowpotential digit line to ground. Similarly, the P-sense amplifier 30consists of cross-coupled PMOS transistors 32, 34 and drives the highpotential digit line to Vcc. The NMOS pair 42, 44 or N-sense-amp commonnode is labeled RNL*. Similarly, the P-sense-amp 30 common node islabeled ACT (for ACTive pull-up). Initially, RNL* is biased to Vcc/2 andACT is biased to ground. Since the digit line pair D1 20 and D1* 22 areboth initially at Vcc/2 volts, the N-sense-amp transistors 42, 44 remainoff due to zero Vgs potential. Similarly, both P-sense-amp transistors32, 34 remain off due to their positive Vgs potential. A signal voltagedevelops between the digit line pair 20, 22 when the memory cell accessoccurs. While one digit line contains charge from the cell access, theother digit line serves as a reference for the sensing operation. Thesense amplifier firing generally occurs sequentially rather thanconcurrently. The N-sense-amp 40 fires first and the P-sense-amp 30second. The N-sense amplifier is fired by providing a signal, labeledNSA to a transistor 46 connecting the common node of the N-senseamplifier to ground. Dropping the RNL* signal toward ground will firethe N-sense-amp 40. As the voltage between RNL* and the digit linesapproaches Vt, the NMOS transistor whose gate connection is to thehigher voltage digit line will begin to conduct. Conduction results inthe discharge of the low voltage digit line toward the RNL* voltage.Ultimately, RNL* will reach ground, bringing the digit line with it.Note that the other NMOS transistor will not conduct since its gatevoltage derives from the low voltage digit line, which is dischargingtoward ground.

[0013] Shortly after the N-sense-amp 40 fires, ACT will be driven towardVcc by applying a low signal PSA to PMOS transistor 48, thus connectingthe common node of the P-sense amplifier 30 to Vcc. This activates theP-sense-amp 30 that operates in a complementary fashion to theN-sense-amp 40. With the low voltage digit line approaching ground, astrong signal exists to drive the appropriate PMOS transistor intoconduction. This will charge the high voltage digit line toward Vcc,ultimately reaching Vcc. Since the memory bit transistor remains onduring sensing, the memory bit capacitor will charge to the RNL* or ACTvoltage level. The voltage, and hence charge, which the memory bitcapacitor held prior to accessing will restore a full level, i.e., Vccfor a logic one and GND for a logic zero.

[0014] In an open digit line architecture as illustrated in FIG. 1,sense amplifiers on each side of an array, or section, are fired.Typically, as illustrated in FIG. 3, a global signal, such as forexample the EQ, NSA or PSA signal, is driven across the memory device bya driver 60 and input to a NAND gate 62 with a section signal, suppliedby a signal source such as a buffer amplifier 61, to fire the sense ampson each side of a specific section. For example, as illustrated in FIG.3, if a row was fired in array 14, the sense amps would fire on both theleft and right side of array 14. Problems exist, however, due to thesignal noise inherent in an open digit line architecture (due to variouscoupling effects) and signal propagation of the global signal. Forexample, the signal propagation causes the left side to fire slightlybefore the right side. This slight difference in firing time can cause amargin imbalance on one side of the section as opposed to the other sideof the section. That is, the side that fires last will have a reducedsignal sensitivity margin for sensing data which can lead to erroneousreading of the data signal. Ideally both sense amps on each side shouldfire simultaneously.

[0015] Thus, there exists a need for an open digit line architecture inwhich the sense amplifiers on each side of a section are firedsimultaneously, thus eliminating margin imbalance on one side of thesection as opposed to the other side of the section.

SUMMARY OF THE INVENTION

[0016] The present invention overcomes the problems associated with theprior art and provides a method and apparatus for simultaneously firingthe sense amplifiers on each side of a section, thereby significantlyreducing any margin imbalance between the two sides.

[0017] In accordance with the present invention, firing of the senseamplifiers on each side of a section is controlled by a two stage NANDgate logic circuit that utilizes a tree routing scheme. By gating theglobal signal with a section signal through the two stage NAND gatelogic circuit, the sense amplifiers on each side of a section can befired simultaneously.

[0018] These and other advantages and features of the invention willbecome more readily apparent from the following detailed description ofthe invention which is provided in connection with the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0019]FIG. 1 illustrates in block diagram form a portion of a memorydevice having an open digit line architecture;

[0020]FIG. 2 illustrates a conventional sense amplifier circuit;

[0021]FIG. 3 illustrates a conventional circuit for firing senseamplifiers in a memory device with an open digit line architecture;

[0022]FIG. 4 illustrates a portion of a circuit for firing senseamplifiers in a memory device with an open digit line architectureaccording to one embodiment of the present invention;

[0023]FIG. 5 illustrates a portion of a circuit for firing senseamplifiers in a memory device with an open digit line architectureaccording to another embodiment of the present invention; and

[0024]FIG. 6 illustrates in block diagram form a processor system thatincludes a memory circuit having a circuit according to the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] The present invention will be described as set forth in theexemplary embodiments illustrated in FIGS. 4-6. Other embodiments may beutilized and structural or logical changes may be made without departingfrom the spirit or scope of the present invention. Like items arereferred to by like reference numerals.

[0026] In accordance with the present invention, firing of the senseamplifiers on each side of a section is controlled by a two stage NANDgate logic circuit that utilizes a tree routing scheme. By gating theglobal signal with a section signal through the two stage NAND gatelogic circuit, the sense amplifiers on each side of a section can befired simultaneously.

[0027]FIG. 4 illustrates a portion of a circuit for firing senseamplifiers in a memory device with an open digit line architectureaccording to one embodiment of the present invention. As illustrated inFIG. 4, the firing of the sense amplifiers 10 is controlled by a globalsignal and a section signal that are passed through a two stage NANDgate logic circuit. The two stage NAND gate logic circuit includes afirst stage of NAND gates 80 a-80 h. The first NAND gate 80 a, locatedat the edge of the row of arrays 12, 14, 16 has both inputs connected toground. NAND gates 80 b and 80 c each have a first input connected tothe global signal line 64 and a second input connected to receive thesection signal Sec i₀ on line 66. NAND gates 80 d and 80 e each have afirst input connected to the global signal line 64 and a second inputconnected to receive the section signal Sec i₁ on line 68. NAND gates 80f and 80 g each have a first input connected to the global signal line64 and a second input connected to receive the section signal Sec i₂ online 70.

[0028] The second stage of the two stage NAND gate logic circuitincludes NAND gates 82 a-82 d. The output signal from each NAND gate 82a-82 d is provided to the sense amplifiers 10 on a respective side ofthe arrays 12, 14, 16. NAND gate 82 a has a first input connected to theoutput of NAND gate 80 a and a second input connected to the output ofNAND gate 80 b. The output of NAND gate 82 a is input to the senseamplifiers 10 located on the left side of array 12 as illustrated. NANDgate 82 b has a first input connected to the output of NAND gate 80 cand a second input connected to the output of NAND gate 80 d. The outputof NAND gate 82 b is input to the sense amplifiers 10 located betweenarray 12 and array 14 as illustrated. NAND gate 82 c has a first inputconnected to the output of NAND gate 80 e and a second input connectedto the output of NAND gate 80 f. The output of NAND gate 82 c is inputto the sense amplifiers 10 located between array 14 and array 16 asillustrated. NAND gate 82 d has a first input connected to the output ofNAND gate 80 g and a second input connected to the output of NAND gate80 h. The output of NAND gate 82 d is input to the sense amplifiers 10located between array 14 and array 16 as illustrated.

[0029] In accordance with the tree routing of the present invention, itis preferable for the global signal line to connect to each pair ofcorresponding first stage NAND gates at a point equidistant between thepair to ensure there is no difference in signal propagation for eachpair. Thus, for example, node A is a point equidistant from NAND gates80 b and 80 c, node B is a point equidistant from NAND gates 80 d and 80e, node C is a point equidistant from NAND gates 80 f and 80 g, etc.Additionally, it is also preferable for the routing distance from eachpair of the first stage of NAND gates to their corresponding secondstage NAND gates to be of equal length. Thus, for example, the routingdistance from NAND gates 80 a and 80 b to NAND gate 82 a, NAND gates 80c and 80 d to NAND gate 82 b, NAND gates 80 d and 80 e to NAND gate 82c, etc. is the same to ensure that the selected pair of second stageNAND gates fire simultaneously as will be further described below.

[0030] The operation of the two stage NAND gate logic circuit is asfollows. Suppose for example a row in array 14 will be accessed.Accordingly, the sense amplifiers 10 on each side of the array 14 willbe fired. A global signal, such as for example the NSA or EQ signal,will be driven high by driver 60 and input to the first input of eachNAND gate 80 b-80 h. It should be understood that a separate two stageNAND gate logic circuit is required for each signal, that is, for eachof the signals NSA, EQ, PSA, etc. In accordance with the presentinvention, the tree routing of the global signal ensures there is nodifference in signal propagation delay between corresponding pairs ofNAND gates and the global signal will be input to a corresponding pairof NAND gates simultaneously. Thus for example, NAND gates 80 b and 80 creceive the global signal at the same time, NAND gates 80 d and 80 ereceive the global signal at the same time, and NAND gates 80 f and 80 greceive the global signal at the same time. Because a row in array 14 isbeing accessed, the signal Sec i₁ on line 68 will be driven high by amemory controller (not shown), while the remaining section signals Seci₀, Sec i₂ and Sec i₃ will remain low. Thus, the high input of theglobal signal on line 64 and the low section signal inputs on lines 66,70 and 72 will cause a high output from each of NAND gates 80 b, 80 c,80 f, 80 g and 80 h. Additionally, since both the inputs to NAND gate 80a are tied to ground, i.e., a low signal, the output of NAND gate 80 awill be a high output. The high input of the global signal on line 64and the high section signal Sec i₁ on line 68 will cause a low outputfrom each of NAND gates 80 d and 80 e.

[0031] The inputs to NAND gates 82 a and 82 d will both be high (fromNAND gates 80 a, 80 b and 80 g, 80 h, respectively). Thus, the outputsfrom NAND gates 82 a and 82 d will be low. The first input to NAND gates82 b and 82 c will be high (from NAND gates 80 c and 80 f, respectively)and the second input to NAND gates 82 b and 82 c will be low (from NANDgates 80 d and 80 e, respectively). Thus, the output from NAND gates 82b and 82 c will be high.

[0032] The sense amplifiers 10 on each side of array 14, upon receivingthe high signals from the outputs of NAND gates 82 b and 82 c, will thenfire. For example, if the global signal is an EQ signal for theequilibration circuit 50 (FIG. 2), the high output signal from NANDgates 82 b, 82 c will be applied to the gates of transistors 52, 54, 56.Alternatively, if the global signal is the NSA signal to fire theN-sense amplifier 40, the high output signal from NAND gates 82 b, 82 cwill be applied to the gate of transistor 46. The sense amplifiers 10receiving a low output signal from NAND gates 82 a, 82 d will not fire.As noted above, since the tree routing of the global signal eliminatesany difference in the propagation delay between corresponding pairs ofNAND gates, the outputs from NAND gates 82 b and 82 c will transitionfrom low to high at the same time, thus firing the sense amplifiers 10on each side of array 14 at the same time.

[0033] Thus, in accordance with the present invention, by gating theglobal signal with a section signal through the two stage NAND gatelogic circuit, the sense amplifiers on each side of a section can befired simultaneously.

[0034]FIG. 5 illustrates a portion of a circuit for firing senseamplifiers in a memory device with an open digit line architectureaccording to another embodiment of the present invention. In theembodiment of FIG. 5, the two stage logic circuit can be utilized toprovide a low signal required to fire the sense amplifiers 10. Forexample, to fire the P-sense amplifier 30 of a sense amplifier 10, a lowsignal PSA must be applied to the gate of transistor 48 to turn ontransistor 48. The circuit of FIG. 5 is identical to that of FIG. 4,except that an inverter 84 a, 84 b, 84 c, 84 d is provided at the outputof NAND gate 82 a, 82 b, 82 c and 82 d, respectively.

[0035] Thus, if as in the above example a row in array 14 is to beaccessed, the high outputs from NAND gates 82 b and 82 c will beinverted by inverters 84 b, 84 c respectively and the low outputs fromthe inverters 84 b, 84 c will be applied to the gate of transistor 48 inthe respective sense amplifiers 10 to fire the P-sense amplifier 30 ineach sense amplifier 10. The low outputs from NAND gates 82 a and 82 bwin be inverted by inverters 84 a, 84 d respectively and the highoutputs from the inverters 84 a, 84 d will maintain the transistors 48in an off state, thus not firing the respective P-sense amplifiers 30 inthe other arrays.

[0036] A typical processor based system that includes memory circuitshaving two stage logic circuit according to the present invention isillustrated generally at 100 in FIG. 6. A computer system is exemplaryof a system having memory circuits. Most conventional computers includememory devices permitting storage of significant amounts of data. Thedata is accessed during operation of the computers. Other types ofdedicated processing systems, e.g., radio systems, television systems,GPS receiver systems, telephones and telephone systems also containmemory devices which can utilize the present invention.

[0037] A processor based system, such as a computer system, for example,generally comprises a central processing unit (CPU) 110, for example, amicroprocessor, that communicates with one or more input/output (I/O)devices 140, 150 over a bus 170. The computer system 100 also includesrandom access memory (RAM) 160, and, in the case of a computer systemmay include peripheral devices such as a floppy disk drive 120 and acompact disk (CD) ROM drive 130 which also communicate with CPU 110 overthe bus 170. RAM 160 is preferably constructed as an integrated circuitthat includes a two stage NAND gate logic circuit as previouslydescribed with respect to FIGS. 4 and 5. It may also be desirable tointegrate the processor 110 and memory 160 on a single IC chip.

[0038] While preferred embodiments of the invention have been describedand illustrated above, it should be understood that these are exemplaryof the invention and are not to be considered as limiting. Additions,deletions, substitutions, and other modifications can be made withoutdeparting from the spirit or scope of the present invention.Accordingly, the invention is not to be considered as limited by theforegoing description but is only limited by the scope of the appendedclaims.

What is claimed as new and desired to be protected by Letters Patent ofthe United States is:
 1. A sense amplifier control circuit for a memorydevice comprising: a first logic gate having a first input coupled to asource of a global control signal, a second input coupled to a source ofa first section signal, and an output; a second logic gate having afirst input coupled to said source of said global control signal, asecond input coupled to a source of a second section signal, and anoutput; a third logic gate having a first input coupled to said sourceof said global control signal, a second input coupled to said source ofsaid second section signal, and an output; a fourth logic gate having afirst input coupled to said source of said global control signal, asecond input coupled to a source of a third section signal, and anoutput; said first, second, third and fourth logic gates substantiallyelectrically equidistant from said source of said global control signal;a fifth logic gate having a first input coupled to said output of saidfirst logic gate, a second input coupled to said output of said secondlogic gate, and an output coupled to a sense amplifier on a first sideof a section of said memory; and a sixth logic gate having a first inputcoupled to said output of said third logic gate, a second input coupledto said output of said fourth logic gate, and an output coupled to asense amplifier on a second side of a section of said memory, whereinwhen said global control signal and said second section signal areactive, said fifth and sixth logic gates provide a sense amplifiercontrol signal to said sense amplifiers on said first and second sidesof said section of said memory, respectively, to activate said senseamplifiers on said first and second sides of said section of said memorysubstantially simultaneously.
 2. The control circuit according to claim1, further comprising: a first inverter coupled between said output ofsaid fifth logic gate and said sense amplifier on said first side ofsaid section of said memory; and a second inverter coupled between saidoutput of said sixth logic gate and said sense amplifier on said secondside of said section of said memory.
 3. The control circuit according toclaim 2, wherein said sense amplifier control signal fires a P-senseamplifier in said sense amplifiers on said first and second sides ofsaid section of said memory.
 4. The control circuit according to claim1, wherein each of said first, second, third, fourth, fifth and sixthlogic gates are NAND gates.
 5. The control circuit according to claim 1,wherein if said section of said memory is located at an edge of saidmemory, said first and second input of said first logic gate are coupledto ground.
 6. The control circuit according to claim 1, wherein saidsense amplifier control signal fires a N-sense amplifier in said senseamplifiers on said first and second sides of said section of saidmemory.
 7. The control circuit according to claim 1, wherein said senseamplifier control signal fires an equilibration circuit in said senseamplifiers on said first and second sides of said section of saidmemory.
 8. The control circuit according to claim 1, wherein said globalcontrol signal is input to said second and third logic gates atsubstantially the same time.
 9. A circuit for providing a respectivecontrol signal to sense amplifiers located on each side of a pluralityof sections of a memory, said circuit comprising: a first plurality ofNAND gates, each of said first plurality of NAND gates having a firstinput coupled to a source of a global control signal and a second inputcoupled to a source of a respective section signal, said respectivesection signal being associated with a respective one of said pluralityof sections, each gate of said first plurality of NAND gatessubstantially electrically equidistant from said source of said globalcontrol signal; and a second plurality of NAND gates, each of saidsecond plurality of NAND gates having a first input coupled to an outputof one of said first plurality of NAND gates, a second input coupled toan output of another of said first plurality of NAND gates, and anoutput coupled to a respective one of said sense amplifiers, said outputproviding said respective control signal to said respective one of saidsense amplifiers.
 10. The circuit according to claim 9, furthercomprising: a plurality of inverters, each of said inverters having aninput coupled to an output of a respective one of said second pluralityof NAND gates and an output coupled to said respective one of said senseamplifiers to provide said respective control signal to said respectiveone of said sense amplifiers.
 11. The circuit according to claim 10,wherein said control signal fires a P-sense amplifier in said respectiveone of said sense amplifiers on each side of one of said sectionssubstantially simultaneously.
 12. The circuit according to claim 9,wherein said control signal fires a N-sense amplifier in said respectiveone of said sense amplifiers on each side of one of said sectionssubstantially simultaneously.
 13. The circuit according to claim 9,wherein said control signal fires an equilibration circuit in saidrespective one of said sense amplifiers on each side of one of saidsections substantially simultaneously.
 14. The circuit according toclaim 9, wherein said global control signal is received by acorresponding pair of said first plurality of NAND gates atsubstantially the same time.
 15. The circuit according to claim 9,wherein said one of said first plurality of NAND gates and said anotherof said first plurality of NAND gates are equidistant from a respectiveone of said second plurality of NAND gates.
 16. A memory devicecomprising: a plurality of sections, each of said plurality of sectionsincluding an array of memory cells; a plurality of rows of senseamplifiers, each of said plurality of rows of sense amplifiers beinglocated between a pair of said plurality of sections; and a controlcircuit for providing a respective control signal to each of saidplurality of rows of sense amplifiers, said control circuit comprising:a first plurality of NAND gates, each of said first plurality of NANDgates having a first input coupled to a source of a global controlsignal and a second input coupled to a source of a respective sectionsignal, said respective section signal being associated with arespective one of said plurality of sections, each gate of said firstplurality of NAND gates substantially electrically equidistant from saidsource of said global control signal; and a second plurality of NANDgates, each of said second plurality of NAND gates having a first inputcoupled to an output of one of said first plurality of NAND gates, asecond input coupled to an output of another of said first plurality ofNAND gates, and an output coupled to a respective one of said rows ofsense amplifiers to provide said respective control signal to saidrespective one of said rows of sense amplifiers.
 17. The memory deviceaccording to claim 16, wherein said control circuit further comprises: aplurality of inverters, each of said inverters having an input coupledto an output of a respective one of said second plurality of NAND gatesand an output coupled to said respective one of said rows ofsense-amplifiers to provide said respective control signal to saidrespective one of said rows of sense amplifiers.
 18. The memory deviceaccording to claim 17, wherein said respective control signal fires aP-sense amplifier in said respective one of said rows of senseamplifiers on each side of one of said sections substantiallysimultaneously.
 19. The memory device according to claim 16, whereinsaid respective control signal fires an N-sense amplifier in saidrespective one of said rows of sense amplifiers on each side of one ofsaid sections substantially simultaneously.
 20. The memory deviceaccording to claim 16, wherein said respective control signal fires anequilibration circuit in said respective one of said rows of senseamplifiers on each side of one of said sections substantiallysimultaneously.
 21. The memory device according to claim 16, whereinsaid global control signal is received by a corresponding pair of saidfirst plurality of NAND gates at substantially the same time.
 22. Thememory device according to claim 16, wherein said one of said firstplurality of NAND gates and said another of said first plurality of NANDgates are equidistant from a respective one of said second plurality ofNAND gates.
 23. A memory device comprising: a plurality of sections,each of said plurality of sections including an array of memory cells; aplurality of rows of sense amplifiers, each of said plurality of rows ofsense amplifiers being located between a pair of said plurality ofsections; and a control circuit for providing a respective controlsignal to each of said plurality of rows of sense amplifiers, saidcontrol circuit comprising: a first logic gate having a first inputcoupled to a source of a global control signal, a second input coupledto a source of a first section signal associated with a first one ofsaid plurality of sections, and an output; a second logic gate having afirst input coupled to said source of said global control signal, asecond input coupled to a source of a second section signal associatedwith a second one of said plurality of sections, and an output; a thirdlogic gate having a first input coupled to said source of said globalcontrol signal, a second input coupled to said source of said secondsection signal, and an output; a fourth logic gate having a first inputcoupled to said source of said global control signal, a second inputcoupled to a source of a third section signal associated with third oneof said plurality of sections, and an output; said first, second, thirdand fourth logic gates substantially electrically equidistant from saidsource of said global control signal; a fifth logic gate having a firstinput coupled to said output of said first logic gate, a second inputcoupled to said output of said second logic gate, and an output coupledto said row of sense amplifiers located between said first one and saidsecond one of said plurality of sections; and a sixth logic gate havinga first input coupled to said output of said third logic gate, a secondinput coupled to said output of said fourth logic gate, and an outputcoupled to said row of sense amplifiers located between said second oneand said third one of said plurality of sections, wherein when saidglobal control signal and said second section signal are active, saidfifth and sixth logic gates provide a sense amplifier control signal tosaid row of sense amplifiers located between said first one and saidsecond one of said plurality of sections and said row of senseamplifiers located between said second one and said third one of saidplurality of sections, respectively, to activate said row of senseamplifiers located between said first one and said second one of saidplurality of sections and said row of sense amplifiers located betweensaid second one and said third one of said plurality of sectionssubstantially simultaneously.
 24. The memory device according to claim23, said control circuit further comprising: a first inverter coupledbetween said output of said fifth logic gate and said row of senseamplifiers located between said first one and said second one of saidplurality of sections; and a second inverter coupled between said outputof said sixth logic gate and said row of sense amplifiers locatedbetween said second one and said third one of said plurality ofsections.
 25. The memory device according to claim 24, wherein saidrespective control signal fires a P-sense amplifier in said senseamplifiers located between said first one and said second one of saidplurality of sections and said row of sense amplifiers located betweensaid second one and said third one of said plurality of sections. 26.The memory device according to claim 23, wherein each of said first,second, third, fourth, fifth and sixth logic gates are NAND gates. 27.The memory device according to claim 23, wherein if said first one ofsaid plurality of sections of said memory is located at an edge of saidmemory, said first and second input of said first logic gate are coupledto ground.
 28. The memory device according to claim 23, wherein saidrespective control signal fires an N-sense amplifier in said row ofsense amplifiers located between said first one and said second one ofsaid plurality of sections and said row of sense amplifiers locatedbetween said second one and said third one of said plurality ofsections.
 29. The memory device according to claim 23, wherein saidrespective control signal fires an equilibration circuit in said row ofsense amplifiers located between said first one and said second one ofsaid plurality of sections and said row of sense amplifiers locatedbetween said second one and said third one of said plurality ofsections.
 30. A memory device comprising: a plurality of arrays; aplurality of rows of sense amplifiers, each of said plurality of rows ofsense amplifiers being between a respective pair of said plurality ofarrays; and a logic circuit for providing a respective control signal toeach of said plurality of rows of sense amplifiers, said logic circuitcausing said respective control signal to be applied to respective rowsof said sense amplifiers on each side of at least one of said pluralityof arrays substantially simultaneously.
 31. The memory device accordingto claim 30, wherein said logic circuit comprises a plurality of NANDgates coupled in an equidistant tree circuit.
 32. The memory deviceaccording to claim 30, wherein said logic circuit further comprises: afirst plurality of NAND gates, each of said first plurality of NANDgates having a first input coupled to a source of a global controlsignal and a second input coupled to a source of a respective sectionsignal, said respective section signal being associated with arespective one of said plurality of arrays, each gate of said firstplurality of NAND gates substantially electrically equidistant from saidsource of said global control signal; and a second plurality of NANDgates, each of said second plurality of NAND gates having a first inputcoupled to an output of one of said first plurality of NAND gates, asecond signal input coupled to an output of another of said firstplurality of NAND gates, and an output coupled to a respective one ofsaid rows of sense amplifiers to provide said respective control signalto said respective rows of said sense amplifiers on each side of said atleast one of said plurality of arrays
 33. The memory device according toclaim 32, wherein said logic circuit further comprises: a plurality ofinverters, each of said inverters having an input coupled to an outputof a respective one of said second plurality of NAND gates and an outputcoupled to said respective one of said rows of sense amplifiers toprovide said respective control signal to said respective rows of saidsense amplifiers on each side of said at least one of said plurality ofarrays.
 34. The memory device according to claim 33, wherein saidrespective control signal fires a P-sense amplifier in said respectiverows of said sense amplifier on each side of said at least one of saidplurality of arrays.
 35. The memory device according to claim 30,wherein in response to said respective control signal, a P-senseamplifier in said respective row is activated.
 36. The memory deviceaccording to claim 30, wherein in response to said respective controlsignal, an N-sense amplifier in said respective row is activated. 37.The memory device according to claim 36, wherein in response to saidrespective control signal, an equilibration circuit in said respectiverow is activated.
 38. A processor system comprising: a processing unit;and a memory device connected to said processing unit, said memorydevice comprising: a plurality of sections, each of said plurality ofsections including an array of memory cells; a plurality of rows ofsense amplifiers, each of said plurality of rows of sense amplifiersbeing located between a pair of said plurality of sections; and acontrol circuit for providing a respective control signal to each ofsaid plurality of rows of sense amplifiers, said control circuitcomprising: a first plurality of NAND gates, each of said firstplurality of NAND gates having a first input coupled to a source of aglobal control signal and a second input coupled to a source of arespective section signal, said respective section signal beingassociated with a respective one of said plurality of sections, eachgate of said first plurality of NAND gates substantially electricallyequidistant from said source of said global control signal; and a secondplurality of NAND gates, each of said second plurality of NAND gateshaving a first input coupled to an output of one of said first pluralityof NAND gates, a second input coupled to an output of another of saidfirst plurality of NAND gates, and an output coupled to a respective oneof said rows of sense amplifiers to provide said respective controlsignal to said respective one of said rows of sense amplifiers.
 39. Theprocessor system according to claim 38, wherein said control circuitfurther comprises: a plurality of inverters, each of said invertershaving an input coupled to an output of a respective one of said secondplurality of NAND gates and an output coupled to said respective one ofsaid rows of sense amplifiers to provide said respective control signalto said respective one of said rows of sense amplifiers.
 40. Theprocessor system according to claim 39, wherein said respective controlsignal fires a P-sense amplifier in said respective one of said rows ofsense amplifiers on each side of one of said sections substantiallysimultaneously.
 41. The processor system according to claim 38, whereinsaid respective control signal fires an N-sense amplifier in saidrespective one of said rows of sense amplifiers on each side of one ofsaid sections substantially simultaneously.
 42. The processor systemaccording to claim 38, wherein said respective control signal fires anequilibration circuit in said respective one of said rows of senseamplifiers on each side of one of said sections substantiallysimultaneously.
 43. The processor system according to claim 38, whereinsaid processing unit and said memory device are on a same chip.
 44. Theprocessor system according to claim 38, wherein said global controlsignal is received by a corresponding pair of said first plurality ofNAND gates at substantially the same time.
 45. The processor systemaccording to claim 38, wherein said one of said first plurality of NANDgates and said another of said first plurality of NAND gates areequidistant from a respective one of said second plurality of NANDgates.
 46. A processor system comprising: a processing unit; and amemory device connected to said processing unit, said memory devicecomprising: a plurality of sections, each of said plurality of sectionsincluding an array of memory cells; a plurality of rows of senseamplifiers, each of said plurality of rows of sense amplifiers beinglocated between a pair of said plurality of sections; and a controlcircuit for providing a respective control signal to each of saidplurality of rows of sense amplifiers, said control circuit comprising:a first logic gate having a first input coupled to a source of a globalcontrol signal, a second input coupled to a source of a first sectionsignal associated with a first one of said plurality of sections, and anoutput; a second logic gate having a first input coupled to said sourceof said global control signal, a second input coupled to a secondsection signal associated with a second one of said plurality ofsections, and an output; a third logic gate having a first input coupledto said source of said global control signal, a second input coupled tosaid source of said second section signal, and an output; a fourth logicgate having a first input coupled to said source of said global controlsignal, a second input coupled to a source of a third section signalassociated with third one of said plurality of sections, and an output;said first, second, third and fourth logic gates substantiallyelectrically equidistant from said source of said global control signal;a fifth logic gate having a first input coupled to said output of saidfirst logic gate, a second input coupled to said output of said secondlogic gate, and an output coupled to said row of sense amplifierslocated between said first one and said second one of said plurality ofsections; and a sixth logic gate having a first input coupled to saidoutput of said third logic gate, a second input coupled to said outputof said fourth logic gate, and an output coupled to said row of senseamplifiers located between said second one and said third one of saidplurality of sections, wherein when said global control signal and saidsecond section signal are active, said fifth and sixth logic gatesprovide a sense amplifier control signal to said row of sense amplifierslocated between said first one and said second one of said plurality ofsections and said row of sense amplifiers located between said secondone and said third one of said plurality of sections, respectively, toactivate said row of sense amplifiers located between said first one andsaid second one of said plurality of sections and said row of senseamplifiers- located between said second one and said third one of saidplurality of sections substantially simultaneously.
 47. The processorsystem according to claim 46, said control circuit further comprising: afirst inverter coupled between said output of said fifth logic gate andsaid row of sense amplifiers located between said first one and saidsecond one of said plurality of sections; and a second inverter coupledbetween said output of said sixth logic gate and said row of senseamplifiers located between said second one and said third one of saidplurality of sections.
 48. The processor system according to claim 47,wherein said respective control signal fires a P-sense amplifier in saidsense amplifiers located between said first one and said second one ofsaid plurality of sections and said row of sense amplifiers locatedbetween said second one and said third one of said plurality ofsections.
 49. The processor system according to claim 46, wherein eachof said first, second, third, fourth, fifth and sixth logic gates areNAND gates.
 50. The processor system according to claim 46, wherein ifsaid first one of said plurality of sections of said memory is locatedat an edge of said memory, said first and second input of said firstlogic gate are coupled to ground.
 51. The processor system according toclaim 46, wherein said respective control signal fires an N-senseamplifier in said row of sense amplifiers located between said first oneand said second one of said plurality of sections and said row of senseamplifiers located between said second one and said third one of saidplurality of sections.
 52. The processor system according to claim 46,wherein said respective control signal fires an equilibration circuit insaid row of sense amplifiers located between said first one and saidsecond one of said plurality of sections and said row of senseamplifiers located between said second one and said third one of saidplurality of sections.
 53. A processor system comprising: a processingunit; and a memory device connected to said processing unit, said memorycomprising: a plurality of arrays; a plurality of rows of senseamplifiers, each of said plurality of rows of sense amplifiers beingbetween a respective pair of said plurality of arrays; and a logiccircuit for providing a repetitive control signal to each of saidplurality of rows of sense amplifiers, said logic circuit causing solidrespective control signals to be applied to respective rows of saidsense amplifiers on each side of at least one of said plurality of arraysubstantially simultaneously.
 54. The processor system according toclaim 53, wherein said logic circuit comprises a plurality of NAND gatescoupled in a tree circuit.
 55. The processor system according to claim53, wherein said logic circuit further comprises: a first plurality ofNAND gates, each of said first plurality of NAND gates having a firstinput coupled to a source of a global control signal and a second inputcoupled to a source of a respective section signal, said respectivesection signal being associated with a respective one of said pluralityof arrays, each gate of said first plurality of NAND gates substantiallyelectrically equidistant from said source of said global control signal;and a second plurality of NAND gates, each of said second plurality ofNAND gates having a first input coupled to an output of one of saidfirst plurality of NAND gates, a second signal input coupled to anoutput of another of said first plurality of NAND gates, and an outputcoupled to a respective one of said rows of sense amplifier to providesaid respective control signal to said respective rows of said senseamplifier on each side of said at least one of said plurality of arrays56. The processor system according to claim 55, wherein said logiccircuit further comprises: a plurality of inverters, each of saidinverters having an input coupled to an output of a respective one ofsaid second plurality of NAND gates and an output coupled to saidrespective one of said rows of sense amplifiers to provide saidrespective control signal to said respective rows of said senseamplifiers on each side of said at least one of said plurality ofarrays.
 57. The processor system according to claim 56, wherein saidrespective control signal fires a P-sense amplifier in said respectiverows of said sense amplifier on each side of said at least one of saidplurality of arrays.
 58. The processor system according to claim 53,wherein in response to said respective control signal, a P-senseamplifier in said respective row is activated.
 59. The processor systemaccording to claim 53, wherein in response to said respective controlsignal, an N-sense amplifier in said respective row is activated. 60.The processor system according to claim 53, wherein in response to saidrespective control signal, an equilibration circuit in said respectiverow is activated.
 61. The processor system according to claim 53,wherein said processing unit and said memory device are on a same chip.62. A method for firing sense amplifiers on a first and second side of asection of a memory, said method comprising: inputting a global controlsignal to a first input of a first plurality of logic gatessubstantially simultaneously; inputting a respective section signal to asecond input of each of said first plurality of logic gates, saidrespective section signal being associated with said section of saidmemory; inputting an output from a first of said first plurality oflogic gates to a first input of a first one of a second plurality oflogic gates; inputting an output from a second of said first pluralityof logic gates to a second input of said first one of said secondplurality of logic gates; inputting an output from a third of said firstplurality of logic gates to a first input of a second one of said secondplurality of logic gates; inputting an output from a fourth of saidfirst plurality of logic gates to a second input of said second one ofsaid second plurality of logic gates; and providing an output of saidfirst one of said second plurality of logic gates to said senseamplifiers on said first side of said section of said memory and anoutput of said second one of said second plurality of logic gates tosaid sense amplifiers on said second side of said section of saidmemory, said sense amplifiers firing in response to said outputs. 63.The method according to claim 62, further comprising the step of:providing said output of said first one of said second plurality oflogic gates to an input of a first inverter and said output of saidsecond one of said second plurality of logic gates to an input of asecond inverter; and providing an output of said first inverter to saidsense amplifiers on said first side of said section of said memory andan output of said second inverter to said sense amplifiers on saidsecond side of said section of said memory, said sense amplifiers firingin response to said outputs of said inverters.
 64. The method accordingto claim 63, wherein said firing of said sense amplifiers furthercomprises: firing a P-sense amplifier in said sense amplifiers on saidfirst and second side of said section of said memory.
 65. The methodaccording to claim 62, wherein said firing of said sense amplifiersfurther comprises: firing an N-sense amplifier in said sense amplifierson said first and second side of said section of said memory.
 66. Themethod according to claim 62, wherein said firing of said senseamplifiers further comprises: firing an equilibration circuit in saidsense amplifiers on said first and second side of said section of saidmemory.
 67. The method according to claim 62, wherein said firing ofsaid sense amplifiers further comprises: firing said sense amplifiers onsaid first and second side of said section of said memory substantiallysimultaneously.
 68. A method for providing a control signal to senseamplifiers located on each side of an array of a memory device, saidmethod comprising: providing a global signal to a logic circuit;providing a section signal to said logic circuit, said section signalbeing associated with said array; determining an output signal for saidlogic circuit to output to said sense amplifiers, said output signalbeing based on said global signal and said section signal; and providingsaid output signal as said control signal to said sense amplifiers oneach side of said array substantially simultaneously.
 69. The methodaccording to claim 68, wherein said logic circuit comprises a pluralityof NAND gates.
 70. The method according to claim 69, wherein said logiccircuit further comprises a plurality of inverters.
 71. The methodaccording to claim 68, wherein said control signal causes a P-senseamplifier in said sense amplifiers to activate.
 72. The method accordingto claim 68, wherein said control signal causes an N-sense amplifier insaid sense amplifiers to activate.
 73. The method according to claim 68,wherein said control signal causes an equilibration circuit in saidsense amplifiers to activate.